Non-volatile Schottky barrier diode memory cell

Details Non-volatile Schottky barrier diode memory cell Non-volatile Schottky barrier diode memory cell

1975-12-31

1977-03-01

James, Andrew J.

357 23, 357 52, 357 53, 357 59, H01L 2948, H01L 2956, H01L 2964, H01L 2978

Patent

active

040104826

ABSTRACT:
A non-volatile memory cell that includes a Schottky barrier diode, located over a sub-diffused line or region formed within the substrate, acting as the control element. Information is stored in the device by introducing electrons into a nitride-oxide interface located at the perimeter of the Schottky barrier junction. Thus, the injected electrons are subject to trapping in the nitride-oxide layer, causing depletion in the epi region adjoining the diode interface, thereby influencing the current carrying state of the device.

REFERENCES:
patent: 3796928 (1974-03-01), Doo et al.
patent: 3836992 (1974-09-01), Abbas et al.
IBM Technical Disclosure Bulletin; by Abbas; vol. 15 No. 6 Nov. 1972 p. 1981.
IBM Technical Disclosure Bulletin; by Freed et al. vol. 15, No. 12 May 1973; pp. 3895-3896.

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