Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-07-12
2011-07-12
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C257SE21175
Reexamination Certificate
active
07977152
ABSTRACT:
Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
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Chiang Tony
Gorer Alexander
Ivanov Igor
Phatak Prashant
Chaudhari Chandra
Intermolecular, Inc.
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