Non-volatile, resistive memory cell based on metal oxide...

Details Non-volatile, resistive memory cell based on metal oxide... Non-volatile, resistive memory cell based on metal oxide...

2007-11-20

2007-11-20

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S536000, C365S148000

Reexamination Certificate

active

11191837

ABSTRACT:
Disclosed is a non-volatile memory cell including a first conductive electrode region, a second conductive electrode region and a memory region disposed therebetween. The memory region includes one or a plurality of metal oxide nanoparticles, which contact and electrically connect the first and the second electrode region via contact locations and which exhibit a bistable resistance properties when applying an external voltage.

REFERENCES:
patent: 2004/0052117 (2004-03-01), Jiang
patent: 2006/0250836 (2006-11-01), Herner et al.

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