Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-06-13
2006-06-13
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S530000, C257S536000
Reexamination Certificate
active
07061071
ABSTRACT:
In one implementation, a non-volatile resistance variable device includes a body formed of a voltage or current controlled resistance setable material, and at least two spaced electrodes on the body. The body includes a surface extending from one of the electrodes to the other of the electrodes. The surface has at least one surface striation extending from proximate the one electrode to proximate the other electrode at least when the body of said material is in a highest of selected resistance setable states. In one implementation, a method includes structurally changing a non-volatile device having a body formed of a voltage or current controlled resistance setable material and at least two spaced electrodes on the body. The body has a surface extending from one of the electrodes to the other of the electrodes, and the surface is formed to comprise at least one surface striation extending from proximate the one electrode to proximate the other electrode. The method includes applying a first voltage between the one and the other electrodes to establish a negative and a positive electrode effective to form a conductive path formed of at least some material derived from the voltage or current controlled resistance setable material and on the surface along at least a portion of the at least one striation.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Lee Hsien-Ming
Micro)n Technology, Inc.
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