Non-volatile resistance switching memory

Details Non-volatile resistance switching memory Non-volatile resistance switching memory

2011-03-01

2011-03-01

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S003000, C257SE47001

Reexamination Certificate

active

07897957

ABSTRACT:
A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

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patent: 2003/0148545 (2003-08-01), Zhuang et al.
patent: 2004/0180542 (2004-09-01), Nagashima et al.
Beck et al., “Reproducible Switching Effect in Thin Oxide Films for Memory Applications,” Applied Physics Letters, AIP Jul. 3, 2000, vol. 77, No. 1, pp. 139-141.
Ikuta K., et al., “Low-Temperature Deposition of SrTiO3, Thin Films by Electron-Cyclotron-Resonance Sputtering for Monlithic Microwave Integrated Circuits Operating in the mm-Wave Band,” Japanese Journal of Applied Physics, Apr. 1998, vol. 37, No. 4A, pp. 1960-1963.
Nishitsuji M. et al., “New GaAs-MMIC process technology using low-temperature deposited SrTiO3, thin film capacitors,” Electronics Letters, Jun. 23, 1994, vol. 30, No. 13, pp. 1045-1046.

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