Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-03-01
2011-03-01
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S002000, C257SE47001
Reexamination Certificate
active
07897411
ABSTRACT:
Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
REFERENCES:
patent: 5856242 (1999-01-01), Arai et al.
patent: 6326315 (2001-12-01), Uchiyama et al.
patent: 6762481 (2004-07-01), Liu et al.
patent: 2002/0196654 (2002-12-01), Mitarai et al.
patent: 2003/0148545 (2003-08-01), Zhuang et al.
patent: 2004/0036571 (2004-02-01), Chen et al.
patent: 2004/0180542 (2004-09-01), Nagashima et al.
Beck et al., “Reproducible Switching Effect in Thin Oxide Films for Memory Applications,” Applied Physics Letters, AIP Jul. 3, 2000, vol. 77, No. 1, pp. 139-141.
Ikuta K., et al., “Low-Temperature Deposition of SrTiO3, Thin Films by Electron-Cyclotron-Resonance Sputtering for Monolithic Microwave Integrated Circuits Operating in the mm-Wave Band,” Japanese Journal of Applied Physics, Apr. 1998, vol. 37, No. 4A, pp. 1960-1963.
Nishitsuji M. et al., “New GaAs-MMIC process technology using low-temperature deposited SrTiO3, thin film capacitors,” Electronics Letters, Jun. 23, 1994, vol. 30, No. 13, pp. 1045-1046.
Allenspach Rolf
Bednorz Johannes G.
Lam Chung Hon
Meijer Gerhard Ingmar
Stutz Richard
Alexanian Vazken
Buchenhorner Michael J.
Fulk Steven J
International Business Machines - Corporation
LandOfFree
Non-volatile resistance switching memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile resistance switching memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile resistance switching memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2652602