Non-volatile programmable memory cell for programmable logic...

Details Non-volatile programmable memory cell for programmable logic... Non-volatile programmable memory cell for programmable logic...

2007-07-17

2007-07-17

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S185250

Reexamination Certificate

active

11233396

ABSTRACT:
A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor of a first conductivity type in series with a volatile MOS transistor of a second conductivity type. The non-volatile MOS transistor may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor, or a nano-crystal transistor. A volatile MOS transistor, an inverter, or a buffer may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor and the volatile MOS transistor.

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