Non-volatile programmable bistable multivibrator, programmable b

Details Non-volatile programmable bistable multivibrator, programmable b Non-volatile programmable bistable multivibrator, programmable b

1996-11-21

1997-10-14

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518509, 36518528, G11C 1606

Patent

active

056778708

ABSTRACT:
An electrically programmable, non-volatile memory that can be used for the storage of the defective addresses in a redundancy circuit of a main memory, using bistable type non-volatile cells. Each cell includes floating-gate transistors, one of which is programmed to make the cell bistable. The floating-gate transistor is programmed by the application of a high voltage, to the gate, an intermediate voltage to the source and a zero voltage or a high impedance state to the drain.

REFERENCES:
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patent: 5136544 (1992-08-01), Rozman
patent: 5267213 (1993-11-01), Sung
patent: 5440508 (1995-08-01), Pathak
IEEE Journal of Solid-State Circuits, vol. 22, No. 5, Oct. 1987 New York, US, pp. 684-692, Ciaoca, et al., "A Million-Cycle CMOS 256K EEPROM".
IEEE Journal of Solid-State Circuits, vol. 17, No. 5, Oct. 1982, New York, US, pp. 847-851, Donaldson et al., "SNOS 1K.times.8 Static Nonvolatile RAM".

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