Non-volatile optical memory element utilizing optically...

Details Non-volatile optical memory element utilizing optically... Non-volatile optical memory element utilizing optically...

2007-01-30

2007-01-30

Kim, Ellen E. (Department: 2874)

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

C360S324200, C369S112090

Reexamination Certificate

active

11172861

ABSTRACT:
The present invention relates to a high-speed optical memory element. In order to increase speed of a memory element, optical pulse is recorded and read all-optically without conversion into electrical signal at very high speed. Optically-induced spin accumulation is used for recording the ferromagnetic metal embedded into optical waveguide operates as a high speed memory element. The ferromagnetic metal is sandwiched between a conductor on one side and a tunnel barrier followed by a conductor on the other side. The voltage is applied between two conductors. For data recording, the optically induced spin-polarized tunneling and spin accumulation is used. The optically induced spin-polarized tunneling occurs due to absorption of circularly polarized light. The torque of accumulated spin reverses magnetization of ferromagnetic metal. For reading Faraday rotation or non-reciprocal loss/gain in semiconductor-ferromagnetic-metal hybrid is used.

REFERENCES:
patent: 5986858 (1999-11-01), Sato et al.
patent: 6052263 (2000-04-01), Gill
patent: 6259586 (2001-07-01), Gill
patent: 6724586 (2004-04-01), Gill
patent: 2006/0177188 (2006-08-01), Ishizaki et al.

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