Non-volatile multilevel memory cells

Details Non-volatile multilevel memory cells Non-volatile multilevel memory cells

2007-10-31

2010-06-22

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185170

Reexamination Certificate

active

07742335

ABSTRACT:
The present disclosure includes methods, devices, modules, and systems for operating non-volatile multilevel memory cells. One method embodiment includes assigning, to a first cell coupled to a row select line, a first number of program states to which the first cell can be programmed. The method includes assigning, to a second cell coupled to the row select line, a second number of program states to which the second cell can be programmed, wherein the second number of program states is greater than the first number of program states. The method includes programming the first cell to one of the first number of program states prior to programming the second cell to one of the second number of program states.

REFERENCES:
patent: 5768188 (1998-06-01), Park et al.
patent: 5872735 (1999-02-01), Banks
patent: 6587372 (2003-07-01), Blodgett
patent: 6807610 (2004-10-01), Frayer
patent: 7164601 (2007-01-01), Mitani et al.
patent: 7457155 (2008-11-01), Nazarian
patent: 7518914 (2009-04-01), Han
patent: 2006/0028877 (2006-02-01), Meir
Cho, Myoung Kwan. “International Search Report” from related PCT Application, mailed Feb. 12, 2009, 3 pgs.

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