Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-01-04
2011-01-04
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240, C365S185120, C365S185170
Reexamination Certificate
active
07864575
ABSTRACT:
Embodiments of the present disclosure provide methods, devices, modules, and systems for programming an array of non-volatile multilevel memory cells to a number of threshold voltage ranges. One method includes programming a lower page of a first wordline cell to increase a threshold voltage (Vt) of the first wordline cell to a first Vt within a lowermost Vt range. The method includes programming a lower page of a second wordline cell prior to programming an upper page of the first wordline cell. The method includes programming the upper page of the first wordline cell such that the first Vt is increased to a second Vt, wherein the second Vt is within a Vt range which is then a lowermost Vt range and is positive.
REFERENCES:
patent: 5768188 (1998-06-01), Park et al.
patent: 6219276 (2001-04-01), Parker
patent: 6522580 (2003-02-01), Chen et al.
patent: 6538923 (2003-03-01), Parker
patent: 7088615 (2006-08-01), Guterman et al.
patent: 7095654 (2006-08-01), Quader et al.
patent: 7339834 (2008-03-01), Lutze
patent: 7436733 (2008-10-01), Mokhlesi
patent: 2004/0170056 (2004-09-01), Shibata et al.
patent: 2005/0007801 (2005-01-01), Barzilai et al.
patent: 2005/0083735 (2005-04-01), Chen et al.
patent: 2006/0050561 (2006-03-01), Guterman et al.
patent: 2006/0140002 (2006-06-01), Kim et al.
patent: 0 797 212 (1997-09-01), None
patent: 9741640 (1997-11-01), None
patent: 2006033099 (2006-03-01), None
United States Patent and Trademark Office Action for Parent U.S. Appl. No. 11/646,815 dated Feb. 25, 2009 (9pgs.).
International Search Report for related U.S. Non-Provisional parent matter, mailed May 9, 2008.
Brooks Cameron & Huebsch PLLC
Le Thong Q
Micro)n Technology, Inc.
LandOfFree
Non-volatile multilevel memory cell programming does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile multilevel memory cell programming, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile multilevel memory cell programming will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2699494