Non-volatile multi-level semiconductor storage device for storin

Details Non-volatile multi-level semiconductor storage device for storin Non-volatile multi-level semiconductor storage device for storin

1998-06-26

2000-02-15

Nelms, David

Static information storage and retrieval

Floating gate

Multiple values

36518524, G11C 1134

Patent

active

060260157

ABSTRACT:
A non-volatile multi-level semiconductor storage device having a memory cell that stores m or more bits (m>2) of data and is responsive to n different levels (n>4) of threshold voltage during a write operation. The different thresholds may be achieved by raising and/or lowering the voltage. In order to permit compatibility with a binary collation judgment in overwriting, the cell is operative, when a write data "1" is to be written in the memory cell, such that when a k bit of m bits (1.ltoreq.k.ltoreq.m) in a pre-write data has a "0", the write data is converted into data "0". The conversion may be accomplished by using a write data "1" and an output signal of a sense amplifier.

REFERENCES:
patent: 5815434 (1998-09-01), Hasbun et al.
patent: 5815436 (1998-09-01), Tanaka et al.

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