Non-volatile multi-level semiconductor flash memory device...

Details Non-volatile multi-level semiconductor flash memory device... Non-volatile multi-level semiconductor flash memory device...

2007-08-14

2007-08-14

Tran, Michael (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185240

Reexamination Certificate

active

11418017

ABSTRACT:
In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address.

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