Non-volatile memory with over-program protection and method ther

Static information storage and retrieval – Floating gate – Particular biasing

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Details

36518518, 36518522, G11C 1604

Patent

active

059912014

ABSTRACT:
A floating-gate non-volatile memory (30) uses a relatively-low threshold voltage to define a programmed state. The memory (30) compensates for fast program cells by providing program pulses which increase in length and magnitude while the cells are being programmed. Between each program pulse the memory (30) determines whether selected cells have been adequately programmed. The memory (30) ceases applying the series of pulses to each cell when it has been adequately programmed. Thus the memory (30) avoids the over-program condition instead of compensating for it.

REFERENCES:
patent: 5200920 (1993-04-01), Norman et al.
patent: 5357476 (1994-10-01), Kuo et al.
patent: 5440505 (1995-08-01), Frazio et al.
patent: 5608669 (1997-03-01), Mi et al.
patent: 5751637 (1998-05-01), Chen et al.

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