Non-volatile memory with improved programming and method...

Optical waveguides – Optical transmission cable – Tightly confined

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07139465

ABSTRACT:
Non-volatile memory that has non-volatile charge storing capability such as EEPROM and flash EEPROM is programmed by a programming system that applies to a plurality of memory cells in parallel. Enhanced performance is achieved by programming each cell to its target state with a minimum of programming pulses using a data-dependent programming voltage. Further improvement is accomplished by performing the programming operation in multiphase where each successive phase is executed with a finer programming resolution such as employing a programming voltage with a gentler staircase waveform. These features allow rapid and accurate convergence to the target states for the group of memory cells being programmed in parallel, thereby allowing each cell to store several bits of information without sacrificing performance.

REFERENCES:
patent: 4357685 (1982-11-01), Daniele et al.
patent: 4628487 (1986-12-01), Smayling
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5218569 (1993-06-01), Banks
patent: 5220531 (1993-06-01), Blyth et al.
patent: 5239505 (1993-08-01), Fazio et al.
patent: 5267218 (1993-11-01), Elbert
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5422842 (1995-06-01), Cernea et al.
patent: 5557567 (1996-09-01), Bergemont et al.
patent: 5602789 (1997-02-01), Endoh et al.
patent: 5623436 (1997-04-01), Sowards et al.
patent: 5638320 (1997-06-01), Wong
patent: 5648929 (1997-07-01), Miyamoto
patent: 5677869 (1997-10-01), Fazio et al.
patent: 5729489 (1998-03-01), Fazio et al.
patent: 5754470 (1998-05-01), Engh et al.
patent: 5764571 (1998-06-01), Banks
patent: 5768192 (1998-06-01), Eitan
patent: 5784315 (1998-07-01), Itoh
patent: 5796652 (1998-08-01), Takeshima et al.
patent: 5801989 (1998-09-01), Lee et al.
patent: 5831903 (1998-11-01), Ohuchi et al.
patent: 5892714 (1999-04-01), Choi
patent: 5923588 (1999-07-01), Iwahashi
patent: 5926409 (1999-07-01), Engh et al.
patent: 5986929 (1999-11-01), Sugiura et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6014327 (2000-01-01), Banks
patent: 6014330 (2000-01-01), Endoh et al.
patent: 6040993 (2000-03-01), Chen et al.
patent: 6046934 (2000-04-01), Lin
patent: 6097639 (2000-08-01), Choi et al.
patent: 6103573 (2000-08-01), Harari et al.
patent: 6134148 (2000-10-01), Kawahara et al.
patent: 6266270 (2001-07-01), Nobukata
patent: 6301161 (2001-10-01), Holzmann et al.
patent: 6317364 (2001-11-01), Guterman et al.
patent: 6373747 (2002-04-01), Harari et al.
patent: 6392931 (2002-05-01), Passotti
patent: 6567302 (2003-05-01), Lakhani
patent: 6621742 (2003-09-01), Yamada
patent: 6738289 (2004-05-01), Gongwer et al.
patent: 6928001 (2005-08-01), Avni
patent: 2000-40382 (2000-08-01), None
Chi, Min-hwa et al., “Low-Voltage Multi-level Flash Memory: Determination of Minimum Spacing Between Multi-levels,” Semiconductor Electronics, 1996, ICSE 1996 Proceedings, 1996 IEEE International Conference Penang, Malaysia, Nov. 26, 1996, pp. 1-5.
Chi, Min-hwa et al., “Multi-level Flash/EPROM Memories: New Self-convergent Programming Methods for Low-voltage Applications,” Electron Devices Meeting, Dec. 10, 1995, pp. 271-274.
Ohkawa, Masayoshi et al., “A 98mm23.3V 64Mb Flash Memory with FN-NOR Type 4-level Cell,” IEEE International Solid-State Circuits Conference, Feb. 8, 1996, pp. 36-37 and 413.
International Search Report in counterpart PCT application PCT/US02/05265, Dec. 3, 2002, 5 pages.
EPO, “Communication Pursuant to Article 96(2) EPC (Office Action)”, mailed in related application No. 02 707 842.7 on Dec. 9, 2005, 4 pages.
EPO, Office Action, mailed in related application No. 02 707 842.7 on Dec. 20, 2004, 7 pages.
Judgment—Bd.R. 127(b),Yamadav.Gongwer, Patent Interference No. 105,386 (SCM), Filed Feb. 22, 2006, pp. 1-3.
Description of SanDisk 64 Megabyte Memory Product Existing Before the Year 2000, Auug. 21, 2002, 2 pages.
Gongwer's Clean Copy of Claims,Yamadav.Gongwer, Patent Interference No. 105,386 (SCM), pp. 1-2, Jun. 2006.
European Patent Office, “Office Action,” mailed in related Application No. 02707842.7 on Jun. 22, 2006, 4 pages.
The Patent Office of the People's Republic of China, “Notification of the First Office Action,” mailed in related Application No. 02800792.1 on Jun. 9, 2006, 6 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-volatile memory with improved programming and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory with improved programming and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory with improved programming and method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3679239

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.