Non-volatile memory with improved program-verify operations

Details Non-volatile memory with improved program-verify operations Non-volatile memory with improved program-verify operations

2007-12-18

2007-12-18

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Magnetic bubbles

One's and zero's

C365S185030, C365S185240

Reexamination Certificate

active

11323577

ABSTRACT:
In programming a non-volatile memory involving alternately applying a programming pulse and verifying the programming, time is saved in the program verify portion when, depending on the states of the memory cells, a portion of the verify operation is recognized to be superfluous and skipped. Preferably, in a program verify operation relative to a demarcation threshold level for demarcating between two memory states, the verify operation includes a sequence of two verify sub-cycles, the first sub-cycle performing a verify relative to a first threshold level at a predetermined margin below the demarcation threshold level and the second sub-cycle performing a verify relative to a second threshold level which is identical to the demarcation threshold level. Unlike conventional cases, the second sub-cycle is not performed until any one memory cell of the group has been verified to pass the first threshold.

REFERENCES:
patent: 4357685 (1982-11-01), Daniele et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5095344 (1992-03-01), Harari
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5315541 (1994-05-01), Harari et al.
patent: 5343063 (1994-08-01), Yuan et al.
patent: 5418752 (1995-05-01), Harari et al.
patent: 5532962 (1996-07-01), Auclair et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5595924 (1997-01-01), Yuan et al.
patent: 5657332 (1997-08-01), Auclair et al.
patent: 5661053 (1997-08-01), Yuan
patent: 5768192 (1998-06-01), Eitan
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6618297 (2003-09-01), Manea
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 6738289 (2004-05-01), Gongwer et al.
patent: 7023736 (2006-04-01), Cernea et al.
patent: 7046568 (2006-05-01), Cernea
patent: 7139465 (2006-11-01), Gongwer et al.
patent: 7173854 (2007-02-01), Cernea et al.
patent: 2004/0057318 (2004-03-01), Cernea et al.
patent: 2004/0109357 (2004-06-01), Cernea et al.
patent: 2005/0162916 (2005-07-01), Guterman
patent: 2005/0162923 (2005-07-01), Guterman
patent: 2005/0169082 (2005-08-01), Cernea
patent: 2005/0237814 (2005-10-01), Li et al.
patent: 2005/0248988 (2005-11-01), Guterman
patent: 2006/0140007 (2006-06-01), Cernea et al.
patent: 2006/0268619 (2006-11-01), Chen
ISA/EPO, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration,” mailed in related International Application No. PCT/US2006/062627 on Jun. 27, 2007, 11 pages.
USPTO, “Notice of Allowance and Fee(s) Due,” mailed in related U.S. Appl. No. 11/323,596 on Feb. 6, 2007, 10 pages.
Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.

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