Static information storage and retrieval – Floating gate – Particular biasing
Patent
1990-06-21
1992-05-05
Clawson, Jr., Joseph E.
Static information storage and retrieval
Floating gate
Particular biasing
365 49, 357 6, 357 235, G11C 1134
Patent
active
051114305
ABSTRACT:
A non-volatile memory includes a charge injecting electrode, a control electrode, and a floating electrode. The charge injecting electrode generates hot carriers by a tunnel effect. The control electrode is formed on the charge injecting electrode to set a tunnel voltage. The floating electrode is formed on the control electrode via an insulating film. The hot carriers generated by the charge injecting electrode are injected over an energy barrier of the insulating film into the floating electrode.
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Clawson Jr. Joseph E.
Nippon Telegraph and Telephone Corporation
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