Non-volatile memory with both single and multiple level cells

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185240

Reexamination Certificate

active

07773418

ABSTRACT:
Memory arrays, and modules, devices and systems that utilize such memory arrays, are described as having a single level non-volatile memory cell interposed between and coupled to a select gate and a multiple level non-volatile memory cell. Various embodiments include structure, process, and operation and their applicability for memory devices and systems. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of single level non-volatile memory cells and a number of multiple level non-volatile memory cells, where a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell.

REFERENCES:
patent: 6191975 (2001-02-01), Shimizu et al.
patent: 6252803 (2001-06-01), Fastow et al.
patent: 6345001 (2002-02-01), Mokhlesi
patent: 6522580 (2003-02-01), Chen et al.
patent: 6643187 (2003-11-01), Mokhlesi
patent: 6807095 (2004-10-01), Chen et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6907497 (2005-06-01), Hosono et al.
patent: 6975537 (2005-12-01), Lutze et al.
patent: 6982905 (2006-01-01), Nguyen
patent: 6994063 (2006-02-01), Murata
patent: 7005699 (2006-02-01), Chen et al.
patent: 7012835 (2006-03-01), Gonzalez et al.
patent: 7020017 (2006-03-01), Chen et al.
patent: 7023733 (2006-04-01), Guterman et al.
patent: 7061798 (2006-06-01), Chen et al.
patent: 7079434 (2006-07-01), Ha
patent: 7113432 (2006-09-01), Mokhlesi
patent: 7366013 (2008-04-01), Roohparvar
patent: 7474560 (2009-01-01), Aritome
patent: 2007/0211537 (2007-09-01), Park et al.
United States Patent and Trademark Office Action for related U.S. Appl. No. 11/507,408 dated Sep. 20, 2007 (17 pgs.).
Applicant's Amendment and Response dated Dec. 13, 2007 to Examiner's Office Action dated Sep. 20, 2007 (26 pgs.).
United States Patent and Trademark Final Office Action for related U.S. Appl. No. 11/507,408 dated Mar. 13, 2008 (17 pgs.).
Applicant's Amendment and Response dated Mar. 21, 2008 to Examiner's Final Office Action dated Mar. 13, 2008 (27 pgs.).
United States Patent and Trademark Office Action for related U.S. Appl. No. 11/507,408 dated May 14, 2008 (16 pgs.).
Applicant's Amendment and Response dated May 27, 2008 to Examiner's Office Action dated May 14, 2008 (30 pgs.).
United States Patent and Trademark Final Office Action for related U.S. Appl. No. 11/507,408 dated Aug. 8, 2008 (18 pgs.).
Applicant's Amendment and Response dated Aug. 18, 2008 to Examiner's Final Office Action dated Aug. 8, 2008 (24 pgs.).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-volatile memory with both single and multiple level cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory with both single and multiple level cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory with both single and multiple level cells will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4149794

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.