Non-volatile memory using substrate electrons

Details Non-volatile memory using substrate electrons Non-volatile memory using substrate electrons

1999-11-15

2000-07-11

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular connection

36518501, 36518514, 3652256, G11C 1604

Patent

active

060882638

ABSTRACT:
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A pair of sources for a pair of cells on adjacent word lines each acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor of one cell operates as a charge injector for the other cell. The charge injector provides carriers for substrate hot carrier injection onto a floating gate.

REFERENCES:
patent: 4366555 (1982-12-01), Hu
patent: 4432075 (1984-02-01), Eitan
patent: 5029130 (1991-07-01), Yeh
patent: 5359555 (1994-10-01), Salter, III
patent: 5936883 (1999-08-01), Kurooka et al.

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