Non-volatile memory in an integrated circuit

Details Non-volatile memory in an integrated circuit Non-volatile memory in an integrated circuit

1995-05-23

1996-10-22

Nelms, David C.

Static information storage and retrieval

Floating gate

257314, 257315, G11C 1134

Patent

active

055684181

ABSTRACT:
A method comprising the steps of depositing a first and second polysilicon layer, separated by an oxide layer; selectively etching the second polysilicon layer to form first gate regions; forming first substrate regions in the substrate and laterally in relation to the first gate regions; selectively etching the first polysilicon layer to form second gate regions of a length greater than the first gate regions; and forming in the substrate, laterally in relation to the second gate regions and partially overlapping the first substrate regions, second substrate regions of a higher doping level than the first substrate regions.

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