Non-volatile memory having a bias on the source electrode...

Details Non-volatile memory having a bias on the source electrode... Non-volatile memory having a bias on the source electrode...

2005-06-21

2005-06-21

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185330

Reexamination Certificate

active

06909638

ABSTRACT:
Each cell of a memory is programmed by first using a source bias that is typically effective for programming the cells. If a cell is not successfully programmed in the first attempt, that is typically because a number of cells on the same column as that of the cell that did not successfully program have a relatively low threshold voltage, a low enough threshold voltage that these memory cells are biased, even with grounded gates, to be conductive. The vast majority of the cells do not have this problem, but it is common for there to be a few memory cells that do have this low threshold voltage characteristic. To overcome this, a different source bias is applied during subsequent programming attempts. Thus, the vast majority of the cells are programmed at the faster programming condition, and only the few that need it are programmed using the slower approach.

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