Non-volatile memory element capable of storing irreversible...

Static information storage and retrieval – Read only systems – Semiconductive

Reexamination Certificate

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C365S096000, C365S148000, C365S189050, C365S189070, C365S190000, C365S207000, C365S225700

Reexamination Certificate

active

11340125

ABSTRACT:
A non-volatile memory element for storing at least one data item, having a readable memory cell which can be written on with a first part of a data item, the memory cell exhibiting a first characteristic which is electrically irreversibly modifiable according to the first partial data item, at least one readable second memory cell which can be written on by a second partial data item, the second memory cell being electrically irreversibly modifiable according to the second partial data item, and a reader device which is coupled to the first memory cell and second memory cell. The memory element is configured such that the first partial data item and second partial data item are respectively determined according to the data item. The reader device is configured such that it determines the stored data item by comparing the first partial data item with the second partial data item.

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