Non-volatile memory electronic device with NAND structure...

Details Non-volatile memory electronic device with NAND structure... Non-volatile memory electronic device with NAND structure...

2007-09-25

2007-09-25

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185120, C365S189050

Reexamination Certificate

active

11279378

ABSTRACT:
A non-volatile memory electronic device is integrated on a semiconductor with an architecture including at least one memory matrix organized in rows or word lines and columns or bit lines of memory cells. The matrix is divided into at least a first and a second memory portions having a different access speed. The first and second memory portions may share the structures of the bit lines which correspond to one another and one by one and are electrically interrupted by controlled switches placed between the first and the second portions.

REFERENCES:
patent: 5732018 (1998-03-01), Choi et al.
patent: 5986933 (1999-11-01), Takeuchi et al.
patent: 6292392 (2001-09-01), Fukui
patent: 6512703 (2003-01-01), Sakui et al.

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