Non-volatile memory devices including fuse covered field...

Details Non-volatile memory devices including fuse covered field... Non-volatile memory devices including fuse covered field...

2006-11-07

2006-11-07

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S529000

Reexamination Certificate

active

07132728

ABSTRACT:
A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.

REFERENCES:
patent: 6518642 (2003-02-01), Kim et al.
patent: 6531757 (2003-03-01), Shiratake
patent: 6972474 (2005-12-01), Hashimoto
patent: 2001-0068736 (2001-07-01), None

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