Non-volatile memory devices having multi-page programming...

Details Non-volatile memory devices having multi-page programming... Non-volatile memory devices having multi-page programming...

2007-11-19

2010-02-16

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S230030

Reexamination Certificate

active

07663924

ABSTRACT:
Methods of programming a non-volatile memory device having at least one memory block with a plurality of memory cells located at intersections of rows and columns is disclosed. Pursuant to these methods, at least two addresses that select corresponding rows of the memory block may be received and temporarily stored. Then, the rows selected by the temporarily stored addresses may be simultaneously activated, and at least some of the memory cells in the activated rows are simultaneously programmed. Corresponding non-volatile memory devices are also provided.

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German Office Action (3 pages) corresponding to German Patent Application 10 2005 033 165.3-55; Mailing Date: Oct. 1, 2008.

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