Non-volatile memory devices and methods for driving the same

Details Non-volatile memory devices and methods for driving the same Non-volatile memory devices and methods for driving the same

2007-07-10

2007-07-10

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185010, C257S316000

Reexamination Certificate

active

11148532

ABSTRACT:
Non-volatile memory devices and methods for driving the same are disclosed. An example non-volatile memory device includes a semiconductor substrate; source/drain junctions in a predetermined region of the semiconductor substrate; a main gate oxide layer above a surface of the semiconductor substrate and disposed between the source/drain junctions, a first end of the main gate oxide layer comprising a first bit charge storage unit including a first tunnel oxide layer, a first potential well layer, and a first coupling oxide layer, and a second, opposing end of the main gate oxide layer comprising a second bit charge storage unit including a second tunnel oxide layer, a second potential well layer, and a second coupling oxide layer; and a main gate electrode above the main gate oxide layer.

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