Non-volatile memory devices

Details Non-volatile memory devices Non-volatile memory devices

1985-01-15

1987-05-12

Fears, Terrell W.

Static information storage and retrieval

Radiant energy

Semiconductive

365184, 365182, 357 236, G11C 1140

Patent

active

046655034

ABSTRACT:
A programmable non-volatile memory cell is disclosed that can be written into the "1," "0," or "previous" state in the presence of unfocused illumination, preferrably ultraviolet (UV) light. The programmed state is controlled by low electrical voltages. Once the illumination is removed the programmed state is non-volatile. The memory cell can be fabricated using conventional MOS processing techniques with no additional mask steps. The cell can thus be implemented on virtually all silicon gate nMOS and CMOS processes.

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