Non-volatile memory device with both single and multiple...

Details Non-volatile memory device with both single and multiple... Non-volatile memory device with both single and multiple...

2009-04-02

2010-10-05

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185050, C365S185180

Reexamination Certificate

active

07808822

ABSTRACT:
A non-volatile memory array with both single level cells and multilevel cells. The single level and multilevel cells, in one embodiment, are alternated either along each bit line. An alternate embodiment alternates the single and multilevel cells along both the bit lines and the word lines so that no single level cell is adjacent to another single level cell in either the word line or the bit line directions.

REFERENCES:
patent: 6487116 (2002-11-01), Khan et al.
patent: 6847550 (2005-01-01), Park
patent: 6943404 (2005-09-01), Huang et al.
patent: 6977842 (2005-12-01), Nazarian
patent: 6983428 (2006-01-01), Cemea
patent: 6987694 (2006-01-01), Lee
patent: 2006/0028870 (2006-02-01), Roohparvar

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