Non-volatile memory device with a programming current...

Details Non-volatile memory device with a programming current... Non-volatile memory device with a programming current...

2008-01-15

2008-01-15

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185280

Reexamination Certificate

active

11303081

ABSTRACT:
A non-volatile memory device includes at least one current source coupled to a bit line, along which at least two memory cells sharing a common source line are connected, for generating a programming current on the bit line when one of the memory cells is selected for programming operation. At least one voltage regulator is coupled to the bit line between the current source and the memory cells for allowing the programming current to flow between the current source and the selected memory cell when a voltage level on the bit line is higher than a predetermined reference voltage, and blocking the programming current flowing between the current source and the selected memory cell when the voltage level on the bit line is lower than the predetermined reference voltage, thereby preventing a punch-through across the unselected memory cell from occurring.

REFERENCES:
patent: 5706240 (1998-01-01), Fiocchi et al.
patent: 5905677 (1999-05-01), Casagrande et al.

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