Non-volatile memory device readable write data latch, and intern

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518504, 36518521, 36518528, 36518533, G11C 1400, G11C 1604, G11C 1606

Patent

active

061046353

ABSTRACT:
A non-volatile semiconductor memory device has a data latch that stores data to be written into memory cells, and functions as a sense amplifier for data read from the memory cells. Read data and write data have opposite polarities in the data latch. A data polarity control circuit in the memory device generates a selection signal indicating whether the data latch stores read data or write data. A data polarity switch generates externally readable data by outputting read data stored in the data latch, and by inverting write data stored in the data latch.

REFERENCES:
patent: 5488579 (1996-01-01), Sharma et al.
patent: 5828600 (1998-10-01), Kato et al.
patent: 5835414 (1998-11-01), Hung et al.

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