Non-volatile memory device providing controlled bulk voltage...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185180, C365S185230

Reexamination Certificate

active

07420852

ABSTRACT:
Disclosed is a non-volatile memory device and a method of programming the same. The non-volatile memory device comprises a plurality of memory cells that are programmed by supplying first and second program voltages thereto. In cases where the second program voltage rises above a predetermined detection voltage, the first program voltage is prevented from being supplied to the memory cell until the second program voltage falls below the detection voltage.

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patent: 6271714 (2001-08-01), Shin
patent: 6611460 (2003-08-01), Lee et al.
patent: 2003/0043673 (2003-03-01), Hashimoto et al.
patent: 1020010070041 (2001-07-01), None
patent: 1020020055253 (2002-07-01), None
patent: 1020020095876 (2002-12-01), None
patent: 1020030031652 (2003-04-01), None
patent: 1020020039744 (2005-05-01), None

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