Static information storage and retrieval – Floating gate – Data security
Reexamination Certificate
2008-01-31
2010-06-01
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Floating gate
Data security
C365S185210, C365S182000, C365S185270
Reexamination Certificate
active
07729164
ABSTRACT:
A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.
REFERENCES:
patent: 7566929 (2009-07-01), Lee et al.
patent: 2005/0253183 (2005-11-01), Umezawa et al.
patent: 2007/0284646 (2007-12-01), Kikuchi et al.
Jin Young-gu
Kim Deok-kee
Kim Suk-pil
Kim Won-joo
Lee Seung-hoon
Harness & Dickey & Pierce P.L.C.
Luu Pho M.
Samsung Elctronics Co., Ltd.
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