Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2009-11-16
2011-12-27
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S321000, C257S322000, C257S550000, C257SE29309
Reexamination Certificate
active
08084791
ABSTRACT:
In a non-volatile memory structure, the source/drain regions are surrounded by a nitrogen-doped region. As a result, an interface between the substrate and the charge trapping layer above the nitrogen-doped region is passivated by a plurality of nitrogen atoms. The nitrogen atoms can improve data retention, and performance of cycled non-volatile memory devices.
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Baker & McKenzie LLP
Macronix International Co. Ltd.
Trinh Michael
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