Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-12-25
2007-12-25
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
11164608
ABSTRACT:
Non-volatile memory devices have a page buffer that can verify pre-erase. A non-volatile memory device may include a cell array having a plurality of strings consisting of memory cells disposed at the intersection regions of bit lines and word lines, and a plurality of page buffers connected to the bit lines through a sensing line. Each of the plurality of page buffers may include a pre-erase detection unit that detects pre-erase in response to a signal of the sensing line in order to verify whether data programmed into the memory cells have been erased, a main erase detection unit that detects main erase in response to a signal of the sensing line in order to verify whether data programmed into the memory cells have been erased, a latch circuit which stores data in response to an output signal of the pre-erase detection unit at the time of pre-erase verify and stores data in response to an output signal of the main erase detection unit at the time of main erase verify, and a verify unit that verifies pass or fail of the pre-erase or main erase in response to a signal of the latch circuit at the time of pre-erase verify or main erase verify.
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Graham Kretelia
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Zarabian Amir
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