Non-volatile memory device having buffer memory with improve...

Static information storage and retrieval – Addressing – Plural blocks or banks

Reexamination Certificate

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Details

C365S230080

Reexamination Certificate

active

11306069

ABSTRACT:
Non-volatile memory devices may include a buffer memory corresponding to one block of a memory cell array, thus improving a read operation. The non-volatile memory device may include a memory cell array including a plurality of memory blocks, each having memory cells disposed at the intersections of bit lines and word lines, a plurality of page buffers connected to the bit lines through a sensing line, and a buffer memory connected between the plurality of memory blocks and the plurality of page buffers. The buffer memory may include special buffers for storing the same data as those of the memory cells.

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patent: 6996014 (2006-02-01), Lee et al.
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patent: 2005-0059984 (2005-06-01), None

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