Non-volatile memory device equipped with means to electrically e

Details Non-volatile memory device equipped with means to electrically e Non-volatile memory device equipped with means to electrically e

1996-02-20

1997-08-05

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

3651852, 36518524, G11C 1134

Patent

active

056549210

ABSTRACT:
The non-volatile memory includes a word line potential control circuit in a non-volatile memory having a memory cell array, word lines, bit lines, an X decoder, a bit line selector, and a source voltage applying circuit. The word line potential control circuit is provided with a threshold voltage detection circuit and a plurality of word line potential control transistors. The threshold voltage detection circuit includes a threshold voltage holding memory cell transistor having a simultaneously processed identical structure as the memory cell transistors and disposed adjacent to the memory cell transistors so as to hold a threshold voltage after ultraviolet light erasing. The threshold voltage detection circuit detects whether a threshold voltage of the threshold voltage holding memory cell transistor is above or below a predetermined reference voltage. Each of the word line potential control transistors has a drain connected to a corresponding one of the word lines and turns on and off in accordance with a detection result from the threshold voltage detection circuit thereby controlling respective potentials of the word lines to one of first and second potentials. In this way, variations in the threshold voltages after the electrical erasing can be reduced.

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