Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-06-17
2008-06-17
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S758000, C257S328000, C257SE23145
Reexamination Certificate
active
07388240
ABSTRACT:
A non-volatile memory device for preventing damage by plasma charges includes a gate electrode formed on a predetermined region of a semiconductor substrate, a source/drain region which is overlapped with the gate electrode and formed in a first well region of the semiconductor substrate, a first metal line coupled to the gate electrode through a first contact plug, a second metal line coupled to the first metal line through a second contact plug so that an external voltage is transferred to the gate electrode, a junction region formed in a second well region separated from the first well region, and a third metal line coupled to the junction region through a third contact plug and coupled to the second metal line through a fourth contact plug.
REFERENCES:
patent: 2005/0195636 (2005-09-01), Umezawa et al.
patent: 07-273198 (1995-10-01), None
patent: 2004-335522 (2004-11-01), None
patent: 10-2004-0048039 (2004-06-01), None
patent: 10-2005-0055223 (2005-06-01), None
Ho Tu-Tu V
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
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