Non-volatile memory device and transistor circuits on the same c

Details Non-volatile memory device and transistor circuits on the same c Non-volatile memory device and transistor circuits on the same c

1992-09-02

1993-08-24

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257491, 257369, 257296, H01L 2702, H01L 2704, H01L 2968

Patent

active

052391973

ABSTRACT:
This invention relates to a semiconductor device comprising an N-type semiconductor substrate, an intermediate breakdown voltage part comprised of a first P-type diffusion layer formed in the N-type semiconductor substrate, a high breakdown voltage part comprised of a second P-type diffusion layer formed in the N-type semiconductor substrate, and a transistor circuit part formed in the N-type semiconductor substrate. According to the invention, a semiconductor device capable of simultaneously forming plural functioning devices in a single semiconductor substrate, causing hardly any short channel effect, is obtained.

REFERENCES:
patent: 4697332 (1987-10-01), Joy et al.
patent: 4859619 (1989-08-01), Wu et al.
patent: 4907058 (1990-03-01), Sakai

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