Non-volatile memory device and method of programming the same

Details Non-volatile memory device and method of programming the same Non-volatile memory device and method of programming the same

2008-06-27

2010-10-05

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C711S169000, C711S103000, C711S154000

Reexamination Certificate

active

07808825

ABSTRACT:
When performing a program operation, a non-volatile memory device comprising a multi-plane performs a cache write operation by employing a page buffer circuit of a plane that does not perform the program operation. A data line mux transfers an externally input first data to a page buffer unit of a plane, which will be programmed, according to a plane select signal, transfers a second data to a page buffer unit of a plane on which a program operation is not performed, while the program of the selected plane is performed, and after the first data is programmed, provides a data transfer path between one page buffer unit and the other page buffer unit according to a data transfer control signal.

REFERENCES:
patent: 2005/0172086 (2005-08-01), Kawai
patent: 2006/0136687 (2006-06-01), Conley et al.
patent: 2007/0061538 (2007-03-01), Chang et al.
patent: 1020020092261 (2002-12-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory device and method of programming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device and method of programming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device and method of programming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4222535