Non-volatile memory device and method of programming same

Details Non-volatile memory device and method of programming same Non-volatile memory device and method of programming same

2007-09-14

2008-11-25

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185270

Reexamination Certificate

active

07457165

ABSTRACT:
Disclosed are a non-volatile memory device and a method of programming the same. The method comprises applying a wordline voltage, a bitline voltage, and a bulk voltage to a memory cell during a plurality of program loops. In cases where the bitline voltage falls below a first predetermined detection voltage during a current program loop, or the bulk voltage becomes higher than a second predetermined detection voltage, the same wordline voltage is used in the current programming loop and a next program loop following the current program loop. Otherwise, the wordline voltage is incremented by a predetermined amount before the next programming loop.

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