Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-11-02
2008-09-23
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185170, C365S185180, C365S185280
Reexamination Certificate
active
07428166
ABSTRACT:
A method for preventing generation of program disturbance incurred by hot electrons in a NAND flash memory device. A channel boosting disturb-prevention voltage lower than a program-prohibit voltage applied to other word lines is applied to edge word lines coupled to memory cells that are nearest to select transistors. As a result, an electric field between the memory cells coupled to the edge word lines and the select transistors is weakened, and the energy of the hot electrons is reduced.
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Hynix / Semiconductor Inc.
Pham Ly D
Townsend and Townsend / and Crew LLP
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