Non-volatile memory device and method of preventing hot...

Details Non-volatile memory device and method of preventing hot... Non-volatile memory device and method of preventing hot...

2007-12-04

2007-12-04

Pham, Ly Duy (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180, C365S185240, C365S189090, C365S189110

Reexamination Certificate

active

11291866

ABSTRACT:
A method for preventing generation of program disturbance incurred by hot electrons in a NAND flash memory device. A channel boosting disturb-prevention voltage lower than a program-prohibit voltage applied to other word lines is applied to edge word lines coupled to memory cells that are nearest to select transistors. As a result, an electric field between the memory cells coupled to the edge word lines and the select transistors is weakened, and the energy of the hot electrons is reduced.

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patent: 10-2002-0054511 (2002-07-01), None
patent: 100496797 (2005-06-01), None
patent: 10-2005-0109835 (2005-11-01), None

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