Non-volatile memory device and method of manufacturing the same

Details Non-volatile memory device and method of manufacturing the same Non-volatile memory device and method of manufacturing the same

2009-01-29

2010-11-23

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S680000, C438S692000, C257SE21170, C257SE21006, C257SE21053, C257SE21058, C257SE21134, C257SE21304, C257SE21229, C257SE21245, C257SE21347, C257SE21352, C257SE21645, C257SE21646

Reexamination Certificate

active

07838379

ABSTRACT:
In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.

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Mutsuko Hatano et al., “Excimer laser-induced temperature field in melting and resolidification of silicon thin films”, Journal of Applied Physics., vol. 87, No. 1, Jan. 2000, pp. 36-43.
Chang-Ho Oh et al., “A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films”, Japanese Journal of Applied Physics, vol. 37, May 1998, pp. L492-L495.

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