Non-volatile memory device and method for the programming of the

Static information storage and retrieval – Floating gate – Particular biasing

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36518529, 36518901, G11C 1604

Patent

active

060916419

ABSTRACT:
A method for performing a first programming operation on a non-volatile memory device of the type that is normally programmed by executing a pre-programming erasure algorithm and then a programming algorithm. According to the method, a non-volatile memory device is manufactured with all its memory cells in the same state, and the first programming operation for setting the memory cells to desired states is performed by executing only the programming algorithm. In a preferred method, the memory device is provided with two modes of operation: a first mode in which programming is accomplished by executing the pre-programming erasure algorithm and then the programming algorithm, and a second mode in which programming is accomplished by executing only the programming algorithm. In the preferred method, the memory device is placed in the second mode of operation before the first programming operation is performed. A non-volatile memory device having two modes of operation is also provided.

REFERENCES:
patent: 4763305 (1988-08-01), Kuo
patent: 5644530 (1997-07-01), Gaultier
patent: 5742548 (1998-04-01), Bahout et al.
patent: 5890193 (1999-03-01), Chevallier

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