Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

1978-11-09

1980-03-11

Davie, James W.

357 54, 357 89, H01L 2978

Patent

active

041930800

ABSTRACT:
The present invention provides a memory device of MNOS FET type wherein a high concentration part and a low concentration part contact each other in the source region and the drain region, and further, double layered insulation films under the gate electrode extending across the source region and drain region are made to contact only the lower concentration part, so that an acceptor impurity is prevented from mixing into the double layered insulation films from the source region and drain region, thus greatly improving the life (number of repeated uses) of the device.

REFERENCES:
patent: 3709746 (1973-01-01), DeWitt
patent: 3853496 (1974-12-01), Kim
patent: 3959025 (1976-05-01), Polinsky
patent: 3986903 (1976-10-01), Watrous, Jr.
patent: 4011576 (1977-03-01), Uchida et al.
A. Platt et al., "FET Fabrication", IBM Technical Disclosure Bulletin, vol. 14, No. 1, Jun. 1971, pp. 247-248.

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