Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

1995-10-18

1998-09-22

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 3, 257197, 257 17, 257295, 257421, 257422, 257296, 257 4, H01L 2988, H01L 27102, H01L 29205, G11C 1156

Patent

active

058118322

ABSTRACT:
A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) between the barriers. The diameter of the pillars is typically of the order of 20-50 nm and is sufficiently small that the device exhibits first and second relatively high and low stable resistive states in the absence of an applied voltage between the terminal regions. The device can be used as a non-volatile memory at room temperature.

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