Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2006-05-04

2008-03-25

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

Magnetic

C365S063000, C365S158000, C365S100000, C365S055000, C365S048000

Reexamination Certificate

active

07349235

ABSTRACT:
A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends in a first direction of the memory array and functions as a gate electrode of a selection transistor included in each memory cell. A second interconnect line extends in the first direction of the memory array. A third interconnect line extends in a second direction. The magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines.

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