Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-01-01
2008-01-01
Hur, Jung (John) H. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S185110, C365S185130
Reexamination Certificate
active
11420367
ABSTRACT:
A non-volatile memory device may include a plurality of memory blocks including memory cells connected in series to bit lines, respectively. Each of the plurality of memory blocks may include a first sub memory block having a first group of memory cells, which are respectively connected in series between first select transistors connected to the bit lines, respectively, and second select transistors connected to a common source line, and a second sub memory block having a second group of memory cells, which are respectively connected in series between third select transistors connected to the bit lines, respectively, and fourth select transistors connected to the common source line.
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Hur Jung (John) H.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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