Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-05-02
2006-05-02
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185110, C365S185200, C365S185210
Reexamination Certificate
active
07038944
ABSTRACT:
A non-volatile memory device includes: a first memory cell array having memory cells, in which one bit data is stored by a plurality of memory cells concurrently; and a second memory cell array having memory cells, in which one bit data is stored by a single memory cell. The device also includes a reference signal generating circuit that generates first and second reference signals, which are used for reading data stored in the first memory cell array and the second memory cell array, respectively; and a sense circuit that accesses the first and second memory cell arrays according to the first and second reference signals, respectively.
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