Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2005-05-10

2005-05-10

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S411000, C257S410000, C257S288000, C257S640000, C438S216000, C438S624000

Reexamination Certificate

active

06891271

ABSTRACT:
A semiconductor device having memory cells. Each of the memory cells has a word gate formed over a semiconductor substrate with a first gate insulating layer interposed, an impurity layer, and first and second control gates in the shape of sidewalls. The first and second control gates adjacent to each other with the impurity layer interposed are connected to a common contact section. The common contact section includes a first contact conductive layer, a second contact conductive layer, and a pad-shaped third contact conductive layer. The third contact conductive layer is formed over the first and second contact conductive layers.

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